SiC Schottky barrier diode
SiC Schottky barrier diode achieving low switching loss
We would like to introduce our "SiC Schottky Barrier Diode (SBD)." In addition to the product's feature of fast reverse recovery time (trr), it adopts a JBS (Junction Barrier Schottky) structure. We offer a 650V product that achieves low leakage current (Ir) and high surge current, which are required for switching power supplies. 【Features】 ■ High reverse voltage ■ Adoption of JBS (Junction Barrier Schottky) structure ■ A 650V product that achieves low leakage current (Ir) and high surge current required for switching power supplies *For more details, please refer to the PDF document or feel free to contact us.
- Company：東芝デバイス&ストレージ
- Price：Other
